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SSM3K101TU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K101TU
High Speed Switching Applications
• • 1.
8V drive Low on-resistance: Ron = 230mΩ (max) (@VGS = 1.
8 V) Ron = 138mΩ (max) (@VGS = 2.
5 V) Ron = 103mΩ (max) (@VGS = 4.
0 V)
0.
65±0.
05 1 2 3 0.
166±0.
05
Unit: mm
2.
1±0.
1 1.
7±0.
1 +0.
1 0.
3 -0.
05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 ± 12 2.
2 4.
4 800 500 150 −55~150 Unit V V A mW °C °C
2.
0±0.
1
Using continuously under heavy loads (e.
g.
the...