SSM3K116TU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K116TU
High Speed Switching Applications
• 2.
5V drive • Low on-resistance:
Ron = 135mΩ (max) (@VGS = 2.
5 V) Ron = 100mΩ (max) (@VGS = 4.
5 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm 2.
1±0.
1 1.
7±0.
1
0.
3-+00.
.
015
2.
0±0.
1 0.
65±0.
05
0.
166±0.
05
Characteristic
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDS
30
V
VGSS
± 12
V
ID
2.
2 A
IDP
4.
4
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
−55 to 150
°C
Note:
Note 1: Note 2:
Using continuously under heavy loads (e.
g.
the a...