SSM3K119TU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K119TU
Power Management Switch Applications High Speed Switching Applications
• 1.
8 V drive • Low ON-resistance: Ron = 134 mΩ (max) (@VGS = 1.
8V)
Ron = 90 mΩ (max) (@VGS = 2.
5V) Ron = 74 mΩ (max) (@VGS = 4.
0V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage Gate–source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDS
30
V
VGSS
± 12
V
ID
2.
5 A
IDP
5.
0
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
−55 to 150
°C
Note:
Note 1: Note 2:
Using continuously under heavy loads (e.
g.
the appli...