com
PROCESS
Small Signal
Transistor
CP767
PNP- Saturated Switch
Transistor Chip
PRELIMINARY
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 12,300 PRINCIPAL DEVICE TYPES 2N3467 2N3468 EPITAXIAL PLANAR 30 x 30 MILS 9.
0 MILS 3.
85 x 4.
20 MILS 7.
35 x 3.
75 MILS Al - 30,000Å Au - 15,000Å
BACKSIDE COLLECTOR
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.
centralsemi.
com
R0 (24-June 2003)
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