com
PROCESS
Power
Transistor
CP712
Central
TM
PNP - Amp/Switch
Transistor Chip
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,960 PRINCIPAL DEVICE TYPES CZT7120 EPITAXIAL PLANAR 75 x 75 MILS 9.
0 MILS 17 x 12 MILS 31 x 12 MILS Al - 30,000Å Ti/Ni/Ag - 11,300Å
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R1 (1-August 2002)
com
Central
TM
PROCESS
CP712
Semiconductor Corp.
Typical Electrical Characteristics
The Typical Electri...