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DataSheet4U.
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PROCESS
Small Signal
Transistor
PNP - High Voltage
Transistor Chip
CP716
Central
TM
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 29,250 PRINCIPAL DEVICE TYPES CMPT5401 CXT5401 CZT5401 2N5401 EPITAXIAL PLANAR 20 x 20 MILS 9.
0 MILS 4.
0 x 4.
0 MILS 4.
7 x 4.
7 MILS Al - 30,000Å Au - 18,000Å
BACKSIDE COLLECTOR
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.
centralsemi.
com
R2 (1-August 2002)
www.
DataSheet4U.
com
Central
TM
PROCESS
CP716
Semiconductor Corp.
Typical Electrical Char...