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2SB1188 / 2SB1182 / 2SB1240
Transistors
Medium power
transistor (−32V, −2A)
2SB1188 / 2SB1182 / 2SB1240
!Features 1) Low VCE(sat).
VCE(sat) = −0.
5V (Typ.
) (IC/IB = −2A / −0.
2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm)
2SB1188
0.
5±0.
1
2SB1182
1.
5±0.
3
0.
2 4.
5 + −0.
1 1.
6±0.
1
0.
2 1.
5 + −0.
1
6.
5±0.
2 0.
2 5.
1+ −0.
1
C0.
5
0.
2 2.
3 + −0.
1 0.
5±0.
1
9.
5±0.
5
2.
5 +0.
2 −0.
1
4.
0±0.
3
0.
3 5.
5+ −0.
1
0.
9
1.
5
(1)
1.
0±0.
2
(2)
(3) 0.
4±0.
1 1.
5±0.
1
0.
1 0.
4 + −0.
05
0.
75 0.
9
0.
65±0.
1
!Structure Epitaxial planar type
PNP silicon
transistor
0.
4±0.
1 1.
5±0.
1
0.
5±0.
1 3.
0±0.
2
0.
55±0.
1 2.
3±0.
2 2.
3±0.
2 1.
0±0.
2
ROHM : MPT3 EIAJ : SC-62
(1) Base (...