Part Number
|
IXGH12N100U1 |
Manufacturer
|
IXYS Corporation |
Description
|
IGBT |
Published
|
Apr 1, 2008 |
Detailed Description
|
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
Combi Pack
IXGH 12N100U1 IXGH 12N100AU1
VCES
I V C25
CE(sat)...
|
Datasheet
|
IXGH12N100U1
|
Overview
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
Combi Pack
IXGH 12N100U1 IXGH 12N100AU1
VCES
I V C25
CE(sat)
1000 V 24 A 3.
5 V 1000 V 24 A 4.
0 V
Symbol
Test Conditions
VCES VCGR
VGES VGEM
I
C25
I
C90
ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW
Continuous Transient
T C
= 25°C
T C
= 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH
PC
TC = 25°C
TJ TJM Tstg
Md Weight
Mounting torque with screw M3
Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
24
A
12
A
48
A
ICM = 24
A
@ 0.
8 VCES
100
W
-55 .
.
.
+150
°C
150
°C
...
Similar Datasheet