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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
,LTD
SOT-23 Plastic-Encapsulate
Transistors
C1815LT1
FEATURES Power dissipation PCM : 0.
2 W£¨ Tamb=25¡æ£© Collector current ICM: 0.
15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150 ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ otherwise specified£©
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat)
TRANSISTOR£¨
NPN...