Part Number
|
MT45W2MW16BFB |
Manufacturer
|
Micron Semiconductor |
Description
|
(MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory |
Published
|
Apr 7, 2008 |
Detailed Description
|
www.DataSheet4U.com
ADVANCE‡
4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
BURST CellularRAMTM
Features
...
|
Datasheet
|
MT45W2MW16BFB
|
Overview
www.
DataSheet4U.
com
ADVANCE‡
4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
BURST CellularRAMTM
Features
• Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.
70V–1.
95V VCC 1.
70V–2.
25V VCCQ (Option W) • Random Access Time: 70ns • Burst Mode Write Access Continuous burst • Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.
62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.
5ns @ 104 MHz • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns • Low Power Consumption Asynchronous READ 25mA Intrapage READ 15mA Initial access, burst READ: ...
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