com Ordering number:346G
PNP/
NPN Epitaxial Planar Silicon
Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, High current 1A.
· Low saturation voltage, excellent hFE linearity.
Package Dimensions
unit:mm 2009B
[2SB631, 631K/2SD600, 600K]
( ) : 2SB631, 631K
1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC ...