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MT45W8MW16BGX

Part Number MT45W8MW16BGX
Manufacturer Micron Technology
Description 8MEG X 16 Async/Page/Burst CellularRAM Memory
Published Apr 7, 2008
Detailed Description com PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 Feature...
Datasheet MT45W8MW16BGX




Overview
com PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.
5 Features • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.
7V–1.
95V Vcc 1.
7V–1.
95V VccQ • Random Access Time: 70ns • Burst Mode READ and WRITE Access 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential MAX clock rate: 104 MHz (tCLK = 9.
62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 7ns @ 104 MHz • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns • Low Power Consumption Asynchronous READ: 30mA Intrapage Read: 15mA Initial access, burst READ: (39ns [4 clocks...






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