Part Number
|
MT45W8MW16BGX |
Manufacturer
|
Micron Technology |
Description
|
8MEG X 16 Async/Page/Burst CellularRAM Memory |
Published
|
Apr 7, 2008 |
Detailed Description
|
com
PRELIMINARY‡
8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
128Mb BURST CellularRAMTM 1.5
Feature...
|
Datasheet
|
MT45W8MW16BGX
|
Overview
com
PRELIMINARY‡
8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
128Mb BURST CellularRAMTM 1.
5
Features
• Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.
7V–1.
95V Vcc 1.
7V–1.
95V VccQ • Random Access Time: 70ns • Burst Mode READ and WRITE Access 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential MAX clock rate: 104 MHz (tCLK = 9.
62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 7ns @ 104 MHz • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns • Low Power Consumption Asynchronous READ: 30mA Intrapage Read: 15mA Initial access, burst READ: (39ns [4 clocks...
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