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IPB04CNE8N G IPP04CNE8N G
OptiMOS®2 Power-
Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO 263) ID 85 3.
9 100 V mΩ A
• Ideal for high-frequency switching and synchronous rectification Type IPB04CNE8N G IPP04CNE8N G
Package Marking
PG-TO263-3 04CNE8N
PG-TO220-3 04CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3)...