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IPB04N03LA G
OptiMOS®2 Power-
Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max (SMD version) ID 25 3.
9 80 V mΩ A
PG-TO263
Type IPB04N03LA G
Package PG-TO263
Marking 04N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche en...