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IPB070N06N G
IPP070N06N G
OptiMOS® Power-
Transistor
Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID
SMDversion
60 6.
7 80
V mΩ A
Type
IPB070N06N G
IPP070N06N G
Type IPB066N06N G Package IPP066N06N G Marking
Package P-TO263-3-2 P-TO263-3-2 070N06N P-TO220-3-1
Marking P-TO220-3-1 066N06N 070N06N 066N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse R...