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IPB091N06N G
IPP091N06N G
OptiMOS® Power-
Transistor
Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID
SMDversion
60 9.
1 80
V mΩ A
Type
IPP091N06N G
IPB091N06N G
Package Marking
PG-TO220-3-1 091N06N
PG-TO263-3-2 091N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage tempe...