Silicon Controlled Rectifier 12 Amp Sensitive Gate SCR Chip
PROCESS CPS110 Silicon Controlled Rectifier 12 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization www.DataSheet4U.com Glass Passivated Mesa 110 x 110 MILS 8.7 MILS 80 x 40 MILS 31 x 31 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROS...
Central Semiconductor