Part Number
|
AP9920GEO |
Manufacturer
|
Advanced Power Electronics |
Description
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
May 2, 2008 |
Detailed Description
|
AP9920GEO
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ w...
|
Datasheet
|
AP9920GEO
|
Overview
AP9920GEO
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.
5V gate drive ▼ www.
DataSheet4U.
com ▼ Optimal DC/DC battery application ▼ RoHS compliant
D2 S2 G2 S2
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
S1 D1 G1 S1
30V 28mΩ 4.
9A
TSSOP-8
ID
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 G1 G2 D2
S1
S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current , VGS @ 4.
5V Drain Current , VGS @ 4.
5V Pu...
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