Part Number
|
AP9962M |
Manufacturer
|
Advanced Power Electronics |
Description
|
POWER MOSFET |
Published
|
May 2, 2008 |
Detailed Description
|
AP9962M
Advanced Power Electronics Corp.
D2
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D2
▼ Low On-resistance ▼ Single D...
|
Datasheet
|
AP9962M
|
Overview
AP9962M
Advanced Power Electronics Corp.
D2
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D2
▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface com Mount Package
D1
D1
BVDSS RDS(ON)
G2
40V 25mΩ 7A
SO-8
S1
G1 S2
ID
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 D2
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current
1,2 3 3
Rating 40 ±2...
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