PROCESS
CP645
Power
Transistor
PNP, 8.
0A Power
Transistor Chip
Central
TM
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area
www.
DataSheet4U.
com
MULTIEPITAXIAL MESA 120 x 145 MILS 13 MILS 20 x 45 MILS 14 x 70 MILS Al - 50,000Å Cr / Ni / Ag - 10,000Å
Emitter Bonding Pad Area Top Side Metalization Back Side Metalization
GEOMETRY GROSS DIE PER 4 INCH WAFER 640 PRINCIPAL DEVICE TYPES MJE15031
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.
centralsemi.
com
R0 (4- April 2005)
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