2SD716
GENERAL DESCRIPTION
SILICON EPITAXIAL PLANAR
TRANSISTOR
Silicon
NPN high frequency, high power
transistors in a plastic envelope, primarily for use in audio and general purpose
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QUICK REFERENCE DATA
SYMBOL
TO-3P(I)D
CONDITIONS VBE = 0V MIN
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time
Tmb 25 IC = 3.
0A; IB = 0.
3A IF = 3.
0A
1.
5
MAX 100 100 6 60 2 2.
0 -
UNIT V V A A W V V s
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETE...