Part Number
|
SI1907DL |
Manufacturer
|
Vishay Siliconix |
Description
|
Dual P-Channel 1.8-V (G-S) MOSFET |
Published
|
Jun 24, 2008 |
Detailed Description
|
SPICE Device Model Si1907DL Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS...
|
Datasheet
|
SI1907DL
|
Overview
SPICE Device Model Si1907DL Vishay Siliconix Dual P-Channel 1.
8-V (G-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
DESCRIPTION
www.
DataSheet4U.
com The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold volta...
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