Part Number
|
CY9C6264 |
Manufacturer
|
Cypress Semiconductor |
Description
|
8K X 8 Magnetic Nonvolatile CMOS RAM |
Published
|
Jun 30, 2008 |
Detailed Description
|
PRELIMINARY
CY9C6264
8K x 8 Magnetic Nonvolatile CMOS RAM
Features
• 100% form-, fit-, and function-compatible with 8K...
|
Datasheet
|
CY9C6264
|
Overview
PRELIMINARY
CY9C6264
8K x 8 Magnetic Nonvolatile CMOS RAM
Features
• 100% form-, fit-, and function-compatible with 8K × 8 micropower SRAM CY9C6264 — Fast Read and Write access: 70 ns — Voltage range: 4.
5V–5.
5V operation — Low active power: 495 mW (max.
)
com — Low standby power, CMOS: 825 µW (max.
)
Description
The CY9C6264 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process.
An MRAM is nonvolatile memory that operates as a RAM.
It provides data retention for more than 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM, EEPROM, Flash and FeRAM.
Its fast ...
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