Part Number
|
K6T8008C2M |
Manufacturer
|
Samsung semiconductor |
Description
|
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Published
|
Jul 2, 2008 |
Detailed Description
|
K6T8008C2M Family
Document Title
1Mx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revisio...
|
Datasheet
|
K6T8008C2M
|
Overview
K6T8008C2M Family
Document Title
1Mx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
History
0.
0 1.
0 Initial draft Finalize - Adopt New Code system.
- Improve VIN, VOUT max.
on A ’ BSOLUTE MAXIMUM RATINGS’from 7.
0V to VCC+0.
5V.
- Change Icc: from 12 to 10mA - Change Icc1: from 10 to 12mA
Draft Date
June 22, 1999 February 29, 2000
Remark
Advance Final
www.
DataSheet4U.
com
The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications and products.
SAMSUNG Electronics will answer to yourquestions about device.
If you have any questions, please contact the SAMSUNG branch office...
Similar Datasheet