2SK3567
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3567
Switching
Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.
7Ω (typ.
) High forward transfer admittance: |Yfs| = 2.
5S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm
www.
DataSheet4U.
com
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 3.
5 14 35 201 3.
5 3.
5 150 -55~150 A W mJ A mJ °C °C Unit V V V
1: Gate 2: Drain 3: Source
Pulse (t =...