Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperature n Lower Leakage Current : 10 μA (Max.
) @ VDS = 100V com IRFW/I540A BVDSS = 100 V RDS(on) = 0.
052 Ω ID = 28 A D2-PAK 2 I2-PAK n Lower RDS(ON) : 0.
041 Ω (Typ.
) 1 1 3 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive A...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)