Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.
DataSheet4U.
com IRFW/I530A BVDSS = 100 V RDS(on) = 0.
11 Ω ID = 14 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.
) @ VDS = 100V Ο I2-PAK Lower RDS(ON) : 0.
092 Ω(Typ.
) 1 1 3 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche En...

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