S DU/D30N02
S amHop Microelectronics C orp.
May,2004 ver1.
1
N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
www.
DataSheet4U.
com 20V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
25A
R DS (ON) ( m W ) Max
20 @ V G S = 4.
5V
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S DU S E R IE S TO-252AA(D-P AK)
S DD S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed
a
S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG
Limit 20 12 25 42 30 50 -55 to 175
Unit V V A A A W C
Drain-S ource D...