SSM6J25FE
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6J25FE
High Speed Switching Applications
• Optimum for high-density mounting in small packages • Low on-resistance: Ron = 260mΩ (max) (@VGS = -4 V)
Ron = 430mΩ (max) (@VGS = -2.
5 V)
Unit: mm
1.
6±0.
05 1.
2±0.
05
0.
2±0.
05
1.
6±0.
05 1.
0±0.
05 0.
5 0.
5
Absolute Maximum Ratings (Ta = 25°C)
1
6
Characteristics Drain-Source voltage
Symbol VDS
Rating
Unit
-20
V
2
5
3
4
0.
12±0.
05
0.
55±0.
05
Gate-Source voltage
VGSS
± 12
V
Drain current
DC
ID
-0.
5
A
Pulse
IDP
-1.
5
Drain power dissipation Channel temperature Storage temperature range
PD
500
mW
(Note 1)
Tch
150
°C
Tstg
−55 to 150
°C
1,...