Part Number
|
SI6968BEDQ |
Manufacturer
|
Vishay Siliconix |
Description
|
Dual N-Channel 2.5-V (G-S) MOSFET Common Drain |
Published
|
Aug 5, 2008 |
Detailed Description
|
Si6968BEDQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection
FEATURES PRODUCT SUMMARY
VDS...
|
Datasheet
|
SI6968BEDQ
|
Overview
Si6968BEDQ
Vishay Siliconix
Dual N-Channel 2.
5-V (G-S) MOSFET Common Drain, ESD Protection
FEATURES PRODUCT SUMMARY
VDS (V)
20
D TrenchFETr Power MOSFET D ESD Protected: 3000 V ID (A)
6.
5 5.
5
rDS(on) (W)
0.
022 @ VGS = 4.
5 V 0.
030 @ VGS = 2.
5 V
D
D
com
TSSOP-8
D S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6968BEDQ-T1 (with Tape and Reel) N-Channel S1 N-Channel S2 D 8 D 7 S2 6 S2 5 G2 *300 W G1 G2 *300 W
*Typical value by design
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipat...
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