Part Number
|
MG150Q2YS65H |
Manufacturer
|
Toshiba Semiconductor |
Description
|
High Power & High Speed Switching Applications |
Published
|
Aug 6, 2008 |
Detailed Description
|
MG150Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG150Q2YS65H
High Power & High Speed Switching Applications
Uni...
|
Datasheet
|
MG150Q2YS65H
|
Overview
MG150Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG150Q2YS65H
High Power & High Speed Switching Applications
Unit: mm
· High input impedance · Enhancement-mode · The electrodes are isolated from case.
Equivalent Circuit
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E1 E2
C1
E2
G1 E1/C2
G2
JEDEC JEITA TOSHIBA Weight: 255 g (typ.
)
― ― 2-95A4A
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting ¾ ¾ Rating 1200 ±20 150 300 150 300 890 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A
Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage te...
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