MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub–Micron MOSFET Line
RF Power Field Effect
Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1.
0 GHz.
The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.
0 dB Efficiency — 40% (Two Tones) IMD — –31.
5 dBc www.
DataSheet4U.
com • Integrated ESD Protection • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power...