Freescale Semiconductor Technical Data
Document Number: MRF9060N Rev.
10, 5/2006
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.
0 dB Efficiency — 40% (Two Tones) IMD — - 31.
5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power www.
DataSheet4U.
com Features • Excellent Thermal Stability • Ch...