H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers September 2007 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Features ■ High voltage: tm General Description The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators.
A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor.
The device is supplied in a standard plastic six-pin dual-in-line package.
– MOC8204M, BVCER = 400V – H11D1M, H11D2M, BVCER = 300V – H11D3M, BVCER = 200V ■ High isolation voltage: – 7500 VAC peak, 1 second ■ Underwriters Laboratory (UL) recognized File # E...

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