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CGH27015F

Part Number CGH27015F
Manufacturer Cree
Description GaN HEMT
Published Aug 18, 2008
Detailed Description PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride (GaN) high elec...
Datasheet CGH27015F




Overview
PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.
3 to 2.
9GHz WiMAX and BWA amplifier applications.
The transistor is available in ceramic, metal flange package.
com Package Type : 440166 PN: CGH2701 5F Typical Performance 2.
4-2.
7 GHz Parameter Small Signal Gain POUT @ 2.
0 % EVM Drain Efficiency @ 2.
0 % EVM Input Return Loss Output Return Loss 2.
4 GHz 14.
5 34.
0 23.
0 7.
0 5.
0 (TC = 25˚C) 2.
5 GHz 14.
5 34.
0 24.
0 6.
0 6.
0 2.
6 GHz 14.
5 34.
0 24.
0 5.
0 7.
0 2.
7 GHz 14.
5...






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