PRELIMINARY
CGH27030F
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27030F is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.
32.
9GHz WiMAX and BWA amplifier applications.
The
transistor is supplied in a ceramic/metal flange package.
com
Package Type : 440166 PN: CGH2703 0F
Typical Performance Over 2.
3-2.
7GHz
Parameter Small Signal Gain EVM @ 21 dBm EVM @ 36 dBm Drain Efficiency @ 36 dBm Input Return Loss 2.
3 GHz 14.
1 2.
3 1.
7 26.
0 7.
9 13.
8 2.
1 1.
7 26.
2 7.
2
(TC = 25˚C)
of Demonstration Amplifier
2.
6 GHz 13.
2 1.
7 1.
8 25.
8 6.
4...