IGBT with Diode IXSN 35N100U1 VCES IC25 VCE(sat) = 1000 V = 38 A = 3.
5 V High Short Circuit SOA Capability 3 2 4 www.
DataSheet4U.
com 1 Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µ H V GE = 15 V, VCE = 0.
6 • V CES, TJ = 125°C RG = 22 Ω, non repetitive T C = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Maximum Ratings 1000 1000 ±20 ±30 38 25 50 ICM = 50 @ 0.
8 VCES 10 205 2500 3000 -40 .
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+150 150 -40 .
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+150 V A V V A A A A µs W V~ V~ °C °C °C miniBLOC, SOT-227 B 1 2 V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCS...

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