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J291

2SJ291

Description

2SJ291 Silicon P-Channel MOS FET November 1996 www.DataSheet4U.com Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Fla...

Hitachi Semiconductor

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