2SD717
GENERAL DESCRIPTION
Silicon Epitaxial Planar
Transistor
Silicon
NPN high frequency, high power
transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL PARAMETER Collector-emitter voltage peak value VCBO Collector-emitter voltage (open base) VCEO Collector current (DC) IC com Collector current peak value ICM Total power dissipation Ptot Collector-emitter saturation voltage VCEsat Diode forward voltage VF Fall time tf CONDITIONS VBE = 0V
TO-3P(I)D
TYP MAX 70 70 10 80 2 2.
0 1.
0UNIT V V A A W V V s
Tmb 25 IC = 4.
0A; IB=0.
4A IF = 3.
5A IC=4A,IB1=-IB2=0.
4A,VCC=30V
1.
5 0.
4
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC I...