SSM3K04FS
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K04FS
High Speed Switch Applications
Unit: mm
• With built-in gate-source resistor: RGS = 1 MΩ (typ.
) • 2.
5 V gate drive • Low gate threshold voltage: Vth = 0.
7~1.
3 V • Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
VDS VGSS
ID PD Tch Tstg
20
V
10
V
100
mA
100
mW
150
°C
−55~150
°C
Note:
Using continuously under heavy loads (e.
g.
the application of
JEDEC
―
high temperature/current/voltage and the significant change in temperature,...