SSM3K04FU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K04FU
High Speed Switch Applications
• • • • With built-in gate-source resistor: RGS = 1 MΩ (typ.
) 2.
5 V gate drive Low gate threshold voltage: Vth = 0.
7~1.
3 V Small package Unit: mm
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 −55~150 Unit V V mA mW °C °C
Note:
JEDEC ― Using continuously under heavy loads (e.
g.
the application of JEITA SC-70 high temperature/current/voltage and the significant change in te...