SGF5N150UF
IGBT
SGF5N150UF
General Description
Fairchild’s Insulated Gate Bipolar
Transistor (IGBT) provides low conduction and switching losses.
www.
DataSheet4U.
com SGF5N150UF is designed for the Switching Power Supply applications.
Features
• High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.
7 V @ IC = 5A • High Input Impedance
Application
Switching Power Supply - High Input Voltage Off-line Converter
C
G
TO-3PF
G C E
E
TC = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum ...