HGTD7N60C3S, HGTP7N60C3
Data Sheet January 2000 File Number 4141.
3
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar
transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Features
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