KSC2335F
KSC2335F
High Speed, High Voltage Switching
• Industrial Use
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NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
1
TO-220F 2.
Collector 3.
Emitter
1.
Base
Value 500 400 7 7 15 3.
5 40 150 - 55 ~ 150
Units V V V A A A W °C °C
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX...