CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
Spec.
No.
: C850I3 Issued Date : 2004.
02.
27 Revised Date : Page No.
: 1/4
BTD2097LI3
Features
• Low VCE(sat), VCE(sat)=0.
25 V (typical), at IC / IB = 3A / 0.
1A • Excellent DC current gain characteristics com • Complementary to BTB1326LI3
Symbol
BTD2097LI3
Outline
TO-251
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature
Note : 1.
Single Pulse Pw≦350µs, Duty≦2%.
Symbol VCBO VCEO VEBO IC ICP PD(TA=2...