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Part Number
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501N04A |
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Manufacturer
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Directed Energy |
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Description
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RF Power MOSFET |
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Published
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Oct 23, 2008 |
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Detailed Description
|
Directed Energy, Inc.
An
DE150-501N04A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
N-Channel Enhancement Mode...
|
|
Datasheet
|
501N04A
|
Overview
Directed Energy, Inc.
An
DE150-501N04A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS
www.
DataSheet4U.
com
VDSS ID25 RDS(on)
Maximum Ratings 500 500 ±20 ±30 4.
5 27 4.
5 3.
5 200 80 3.
5 -55…+150 150 -55…+150 V V V V A A A mJ V/ns V/ns W W °C °C °C °C g
Features
SG1 SG2 GATE
= = = =
500 V 4.
5 A 1.
5 Ω 80W
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0
PDHS
VDGR
VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJ...
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