|
Part Number
|
DE150-102N02A |
|
Manufacturer
|
Directed Energy |
|
Description
|
RF Power MOSFET |
|
Published
|
Oct 23, 2008 |
|
Detailed Description
|
Directed Energy, Inc.
An
DE150-102N02A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
N-Channel Enhancement Mode...
|
|
Datasheet
|
DE150-102N02A
|
Overview
Directed Energy, Inc.
An
DE150-102N02A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS
www.
DataSheet4U.
com
VDSS ID25 RDS(on)
Maximum Ratings 1000 1000 ±20 ±30 1.
5 9 1.
5 6 3 200 80 3.
5 -55…+150 150 -55…+150 V V V V A A A mJ V/ns V/ns W W °C °C °C °C g
Features
SG1 SG2 GATE
= = = =
1000 V 1.
5 A 11 Ω 80W
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0
PDHS
VDGR
VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ T...
Similar Datasheet