Part Number
|
K9F1G08R0A |
Manufacturer
|
Samsung semiconductor |
Description
|
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
Published
|
Oct 25, 2008 |
Detailed Description
|
K9F1G08R0A K9F1G08U0A K9K2G08U1A
FLASH MEMORY
Document Title
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
Revision H...
|
Datasheet
|
K9F1G08R0A
|
Overview
K9F1G08R0A K9F1G08U0A K9K2G08U1A
FLASH MEMORY
Document Title
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
Revision History
Revision No
0.
0 0.
1
History
1.
Initial issue 1.
The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle at program operation.
2.
Added Addressing method for program operation
Draft Date
Aug.
24.
2003 Jan.
27.
2004
Remark
Advance Preliminary
com
0.
2 0.
3 0.
4
1.
Add the Protrusion/Burr value in WSOP1 PKG Diagram.
1.
PKG(TSOP1, WSOP1) Dimension Change 1.
Technical note is changed 2.
Notes of AC timing characteris...
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