FPD750SOT343
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
PACKAGE: FEATURES (1850MHZ):
• • • • • 0.
5 dB N.
F.
min.
20 dBm Output Power (P1dB) 16.
5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC)
Datasheet v3.
0
ROHS:
9
GENERAL DESCRIPTION:
The www.
DataSheet4U.
com FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility
Transistor (pHEMT).
It utilizes a 0.
25 µm x 750 µm
Schottky barrier Gate.
The Filtronic 0.
25µm process ensures class-leading noise performance.
The use of a small footprint plastic package allows for cost effective system implementation.
TYPICAL APPLICATIONS:
• • • 802.
11a,b,g and WiMax LNAs PCS/Cellular High Linearity LNAs ...