FPD7612
GENERAL PURPOSE PHEMT
FEATURES:
• • • • • 20.
5 dBm Output Power (P1dB) 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 11 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency
Datasheet v3.
0
LAYOUT:
GENERAL DESCRIPTION:
The com FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (PHEMT), featuring a 0.
25 µm by 200 µm
Schottky barrier gate, defined by high -resolution stepper-based photolithography.
The recessed gate structure minimizes parasitics to optimize performance.
The epitaxial structure and processing have been optimized for reliable high-power applications.
TYPICAL APPLICATIONS:
• • • • Narrowband and broadband ...